| PART |
Description |
Maker |
| 2SB596 2SB596O 2SB596Y |
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 4A I(C) | TO-220AB 晶体管|晶体管|进步党| 80V的五（巴西）总裁| 4A条一（c）| TO - 220AB现有
POWER TRANSISTORS(4.0A,80V,30W)
|
Mospec Semiconductor, Corp.
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| 2SAR553P |
PNP -2.0A -50V Middle Power Transistor
|
Rohm
|
| 2SAR554P5 |
Middle Power Transistors (-80V / -1.5V)
|
Rohm
|
| BDX34D BDX34B-S |
PNP DARLINGTON 80V 10A 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
Bourns Inc.
Bourns, Inc.
|
| CFB949AQ CFD1275AQ CFB949AP CFD1275AP CFD1275R CFB |
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AQ
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949AQ
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275AP
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949AP
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 2500 hFE. Complementary CFB949R
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275P
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AR
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275A
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949Q
|
Continental Device India Limited
|
| BCP5316Q BCP5316QTA |
80V PNP MEDIUM POWER TRANSISTORS IN SOT223
|
Diodes
|
| BSR33TA |
80V PNP MEDIUM POWER TRANSISTOR IN SOT89
|
Diodes
|
| 2N4239X |
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-39 晶体管|晶体管|进步党| 80V的五（巴西）总裁| 1A条一（c）| TO - 39封装
Bipolar PNP Device in a Hermetically sealed TO39
|
NXP Semiconductors N.V.
Seme LAB
|
| HUF75542S3S HUF75542P3 FN4845 HUF75542S3ST |
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 75A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 75A条（丁）|263AB
75A, 80V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs 75 A, 80 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
75A/ 80V/ 0.014 Ohm/ N-Channel/ UltraFET Power MOSFETs
75A 80V 0.014 Ohm N-Channel UltraFET Power MOSFETs
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| 2SB1451R 2SB1451S 2SD2200S |
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-252VAR
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-252VAR 晶体管|晶体管|叩| 80V的五（巴西）总裁| 5A条一（c）|52VAR
|
Amphenol, Corp.
Voltage Multipliers, Inc.
|
| 2SCR533PFRA |
Middle Power Transistor (50V / 3A)
|
Rohm
|
|
